منابع مشابه
Development of Novel Prototype Scalable Magnetoresistive Random Access Memory
MRAM has received a great deal of attention in recent years for its potential to become a universal memory capable of nonvolatility, infinite cycleability, fast switching speeds, high density, and low cost. However, the limitations of conventional design architectures have made MRAM difficult to realize. In this work, a new annular currentperpendicular-to-plane (CPP) giant magnetoresistive (GMR...
متن کاملHigh-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented. ECC post processing increases the quality of randomness by increasing the entropy of random number. We experimentally show that a small error-correcting capability circuit is sufficient for this post processing. It is...
متن کاملHigh-density magnetoresistive random access memory operating at ultralow voltage at room temperature
The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the ...
متن کاملHolographic Random Access Memory
We examine the primary challenges for building a practical and competitive holographic random access memory (HRAM) system, specifically for size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporating conjugate readout, a pixel-matched sensor array, and a linear array of laser diodes. It provides faster random access time than hard disk ...
متن کاملMolecular random access memory cell
Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times .15 min have been observed. © 2001 American Institute of Physics. @DOI: 10.1063/1.1...
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 2016
ISSN: 0018-9219,1558-2256
DOI: 10.1109/jproc.2016.2590142